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Beilstein J. Nanotechnol. 2014, 5, 1569–1574, doi:10.3762/bjnano.5.168
Figure 1: Top view of a 5h-2BN-ZGNR (left panel) and the same GNR with surface roughness (right panel). The b...
Figure 2: (a) Averaged transmission of 10 nm length 4h-2BN-ZGNR as function of the energy for various SR ampl...
Figure 3: Schematic representation of the simulated device structure. The gate insulator is assumed to be 2.5...
Figure 4: (a) Averaged transfer characteristic (b) on-current (c) off-current and (d) on-/off-current ratio o...
Figure 5: (a) The average transfer characteristic of 10 nm length devices with SiO2 substrate for different d...